Shortcut Methods
Shortcut Methods and Tricks
1. Integer values:
for Si junction for Ge junction- Depletion width
- Depletion width
- Drift Velocity
2. Conceptual understandings:
- Drift current is indeed proportional to the applied voltage.
- Barrier potential
is indeed temperature-dependent. - The depletion region width does increase with increasing reverse bias voltage.
- The electric field in the depletion region is indeed uniform.
- The electric potential is constant in the neutral regions, as we expect.
- The potential difference across the junction is equal to the sum of the built-in potential and the applied bias voltage.
- The current-voltage characteristic of a
junction diode is indeed nonlinear. - The diode is said to be forward biased when the
junction is connected to a battery with the positive terminal connected to the -side and the negative terminal connected to the -side, and reverse biased when the junction is connected to a battery with the positive terminal connected to the -side and the negative terminal connected to the -side. - The diode is said to be in the breakdown region when the reverse bias voltage exceeds a certain value, called the breakdown voltage, just as you said.