Notes from Toppers
Field and Potential in P-N junction
References: NCERT Class 12, Chapter 14, Semiconductor Electronics: Materials, Devices, and Simple Circuits
Important subtopics:
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Formation of depletion layer:
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Formation of P-N junction by joining N-type and P-type semiconductors
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Diffusion of majority carriers across the junction
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Establishment of equilibrium and formation of depletion layer
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Built-in potential:
- Definition of built-in potential (Vbi)
- Calculation of built-in potential using Fermi level difference and contact potential
- Significance of built-in potential in P-N junction
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Electric field in the depletion region:
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Gauss’s law in the depletion region
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Derivation of electric field (E) in the depletion region
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Variation of electric field with distance
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Potential variation across the depletion region:
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Derivation of potential variation (V) across the depletion region
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Relationship between potential variation and electric field
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Graphical representation of potential variation
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Capacitance of P-N junction:
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Definition of capacitance (C) in P-N junction
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Derivation of capacitance using charge-voltage relation and plate separation
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Factors affecting capacitance:
- Doping concentration (N)
- Depletion region width (w)
- Junction area (A)
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Applications of P-N junction diode:
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Rectifier:
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Principle of rectification: conversion of alternating current (AC) to direct current (DC)
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Half-wave rectifier:
- Circuit diagram and working
- Output waveform
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Full-wave rectifier:
- Circuit diagram and working
- Output waveform
- Bridge rectifier:
- Circuit diagram and working
- Output waveform
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Zener diode:
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Zener breakdown:
- Mechanism of Zener breakdown
- Comparison with avalanche breakdown
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Voltage regulation using Zener diode:
- Circuit diagram and working
- Load regulation and line regulation
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Additional resources:
- Semiconductor Devices: Basic Principles by S. M. Sze
- Electronic Devices and Circuits by Jacob Millman and Christos Halkias
- Fundamentals of Solid-State Electronics by Ben Streetman and Sanjay Banerjee