SATHEE: Semiconducting Devices Question 52

Semiconducting Devices Question 52

Question: The contribution in the total current flowing through a semiconductor due to electrons and holes are $\frac{3}{4}$ and $\frac{1}{4}$ respectively. If the drift velocity of electrons is $\frac{5}{2}$ times that of holes at this temperature, then the ratio of concentration of electrons and holes is

Options:

A) 6 : 5

B) 5 : 6

C) 3 : 2

D) 2 : 3

Show Answer

Answer:

Correct Answer: A

Solution:

As we know current density J = nqv

Therefore $J_{e} = n_{e} q v_{e}$ and $J_{h} = n_{h} q v_{h}$

Therefore $\frac{J_{e}}{J_{h}} = \frac{n_{e}}{n_{h}} \times \frac{v_{e}}{v_{h}}$

Therefore $\frac{3 / 4}{1 / 4} = \frac{n_{e}}{n_{h}} \times \frac{5}{20}$

Therefore $\frac{n_{e}}{n_{h}} = \frac{6}{5}$

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Semiconducting Devices Question 52

Question: The contribution in the total current flowing through a semiconductor due to electrons and holes are 34 and 14 respectively. If the drift velocity of electrons is 52 times that of holes at this temperature, then the ratio of concentration of electrons and holes is

Options:

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