Semiconducting Devices Question 51

Question: A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area 1 cm2 and thickness 0.5 mm. If the concentration of electrons in Ge is 2 x 10 ^19/m3 and mobilities of electrons and holes are 0.36m2voltsec and 0.14m2voltsec respectively, then the current flowing through the plate will be

Options:

A) 0.25 A

B) 0.45 A

C) 0.56 A

D) 0.64 A

Show Answer

Answer:

Correct Answer: D

Solution:

σ=ne(μe+μh)=2×1019×1.6×1019(0.36+0.14)

=1.6(Ω-m)1

R=ρlA=lσA=0.5×1031.6×104=258Ω

i=VR=225/8=1625A=0.64A



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