Semiconducting Devices Question 51
Question: A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area 1 cm2 and thickness 0.5 mm. If the concentration of electrons in Ge is 2 x 10 ^ /m3 and mobilities of electrons and holes are and respectively, then the current flowing through the plate will be
Options:
A) 0.25 A
B) 0.45 A
C) 0.56 A
D) 0.64 A
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Answer:
Correct Answer: D