Semiconducting Devices Question 234

Question: A semiconductor X is made by doping a germanium crystal with arsenic (Z = 33). A second semiconductor Y is made by doping germanium with indium (Z = 49). The two are joined end to end and connected to a battery as shown. Which of the following statements is correct

[Orissa JEE 1998]

Options:

A) X is P-type, Y is N-type and the junction is forward biased

B) X is N-type, Y is P-type and the junction is forward biased

C) X is P-type, Y is N-type and the junction is reverse biased

D) X is N-type, Y is P-type and the junction is reverse biased

Show Answer

Answer:

Correct Answer: D

Solution:

Arsenic has five valence electrons, so it a donor impurity.

Hence X becomes N-type semiconductor.

Indium has only three outer electrons, so it is an acceptor impurity.

Hence Y becomes P-type semiconductor.

Also N (i.e.X) is connected to positive terminal of battery and P

(i.e.Y) is connected to negative terminal of battery so PN-junction is reverse biased.



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