Semiconducting Devices Question 215

Question: Consider the following statements A and B and identify the correct choice of the given answers A: The width of the depletion layer in a P-N junction diode increases in forwards bias B: In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap

[EAMCET (Engg.) 2000]

Options:

A) A is true and B is false

B) Both A and B are false

C) A is false and B is true

D) Both A and B are true

Show Answer

Answer:

Correct Answer: C

Solution:

In forward biasing of PN junction diode width of depletion layer decreases.

In intrinsic semiconductor fermi energy level is exactly in the middle of the forbidden gap



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