Semiconducting Devices Question 210
Question: The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N junctions are
[IIT-JEE 1997 Cancelled; RPMT 2000; AIIMS 2000]
Options:
A) Drift in forward bias, diffusion in reverse bias
B) Diffusion in forward bias, drift in reverse bias
C) Diffusion in both forward and reverse bias
D) Drift in both forward and reverse bias
Show Answer
Answer:
Correct Answer: B
Solution:
In forward biasing the diffusion current increases and drift current remains constant so not current is due to the diffusion.
In reverse biasing diffusion becomes more difficult so net current (very small) is due to the drift.
