Bipolar Junction Transistor Basics

  • Introduction to the transistor
  • Structure of a bipolar junction transistor (BJT)
  • Types of bipolar junction transistors (NPN and PNP)
  • Symbol and terminals of a transistor
  • Basic working principle of a transistor

Structure of a Bipolar Junction Transistor

  • Three layers: emitter, base, and collector
  • Doped with specific impurities (N-type or P-type)
  • Sandwiched together to form the transistor
  • Emitter region is heavily doped
  • Base region is lightly doped
  • Collector region is moderately doped

Types of Bipolar Junction Transistors

  • NPN Transistor:

    • N-doped emitter and collector regions
    • P-doped base region
  • PNP Transistor:

    • P-doped emitter and collector regions
    • N-doped base region

Symbol and Terminals of a Bipolar Junction Transistor

  • Symbol:
    • Arrow points in the direction of conventional current flow from emitter to base
  • Terminals:
    • Emitter (E)
    • Base (B)
    • Collector (C)
  • Transistor packages may have different pin configurations, but the terminal names remain the same.

Basic Working Principle of a Transistor

  • Bipolar junction transistors are current-controlled devices.
  • The base-emitter junction is forward biased.
  • Electrons from the emitter region diffuse into the base region.
  • A small base current controls a much larger collector current.
  • The collector-emitter junction is reverse biased.
  • Transistor amplifies current or acts as a switch.

Transistor in Active Region

  • Base-emitter junction forward bias voltage (Vbe) is applied.
  • Emitter current (Ie) flows into the base region, controlled by base current (Ib).
  • Majority charge carriers (electrons or holes) cross the base region.
  • Part of the majority carriers recombine with minority carriers.
  • Majority carriers emerge in the collector region and form the collector current (Ic).

Transistor Current Amplification

  • Transistor can amplify the base current signal to a much larger collector current.
  • Current Gain (β):
    • Ratio of collector current (Ic) to base current (Ib)
    • Typically ranges from 20 to 1000 for common BJTs
  • Formulas:
    • Ic = β × Ib
    • Ie = Ic + Ib

Transistor as an Amplifier

  • Small input signal applied to the base, resulting in a small change in Ib.
  • Large output signal obtained at the collector, resulting in a large change in Ic.
  • Amplification is achieved due to the current gain (β) of the transistor.

Transistor as a Switch

  • Transistor can be used as an electronic switch.
  • In the cutoff region, both junctions are reverse biased, and no current flows.
  • In the saturation region, both junctions are forward biased, allowing maximum current flow.
  • Switching behavior depends on the base-emitter voltage (Vbe).

Example of Transistor as a Switch

  • Light switch:
    • When the switch is closed, the base-emitter junction is forward biased.
    • Current flows through the collector-emitter path and the light bulb turns on.
    • When the switch is open, the base-emitter junction is reverse biased.
    • No current flows, and the light bulb turns off.

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Common Emitter Amplifier Circuit

  • The common emitter amplifier is the most commonly used configuration of a transistor amplifier.
  • It provides high voltage gain and current gain.
  • The input is applied to the base-emitter junction, and the output is taken from the collector-emitter junction.
  • Characteristics of a common emitter amplifier:
    • Inverting amplifier
    • High voltage gain
    • Medium input impedance
    • Medium output impedance

Common Collector Amplifier Circuit

  • The common collector amplifier, also known as an emitter follower, is another configuration of a transistor amplifier.
  • It provides high current gain but no voltage gain.
  • The input is applied to the base-emitter junction, and the output is taken from the emitter to ground.
  • Characteristics of a common collector amplifier:
    • Non-inverting amplifier
    • Unity voltage gain
    • High input impedance
    • Low output impedance

Common Base Amplifier Circuit

  • The common base amplifier is the least commonly used configuration of a transistor amplifier.
  • It provides high current gain and low voltage gain.
  • The input is applied to the emitter-base junction, and the output is taken from the collector to ground.
  • Characteristics of a common base amplifier:
    • Non-inverting amplifier
    • Unity current gain
    • Low input impedance
    • High output impedance

Applications of Bipolar Junction Transistors

  • Amplification: Transistors are extensively used in audio and radio frequency amplifiers.
  • Switching: They are used in digital logic gates and as switching devices in various electronic circuits.
  • Oscillation: Transistors can be used to generate continuous waveforms, such as in radio frequency oscillators.
  • Voltage regulation: They can be used in voltage regulator circuits to maintain a constant output voltage.

Transistor Biasing

  • Biasing is the process of establishing a DC operating point for the transistor.
  • It ensures that the transistor operates in the active region for amplification and avoids cutoff or saturation.
  • Different biasing methods can be used: fixed bias, emitter bias, and collector feedback bias.

Fixed Bias Configuration

  • The fixed bias configuration uses a voltage divider network of resistors to set the base-emitter voltage.
  • This establishes the DC operating point (Q point) of the transistor.
  • The voltage divider provides negative feedback and stabilizes the DC operating conditions.

Emitter Bias Configuration

  • The emitter bias configuration includes a resistor connected in series with the emitter.
  • This resistor provides negative feedback and helps stabilize the operating conditions.
  • The base-emitter junction is forward biased by the voltage drop across the emitter resistor.
  • Emitter bias configuration provides improved stability compared to the fixed bias configuration.

Collector Feedback Bias Configuration

  • The collector feedback bias configuration utilizes a combination of fixed bias and emitter bias techniques.
  • This configuration provides better stability and avoids variations due to changes in β (current gain).
  • A resistive network connects the collector to the base, providing feedback and stabilization.

Transistor Input and Output Characteristics

  • Input Characteristics: Shows the relationship between base-emitter voltage (Vbe) and base current (Ib) for a given collector-emitter voltage (Vce).
  • Output Characteristics: Shows the relationship between collector-emitter voltage (Vce) and collector current (Ic) for different base currents (Ib).
  • These characteristics help in analyzing the transistor’s behavior and selecting suitable operating conditions.

Summary

  • Bipolar junction transistors are three-layered semiconductor devices used for amplification, switching, and other applications.
  • The main types of BJTs are NPN and PNP transistors.
  • Transistors work on the principle of minority carrier injection and transistor action.
  • They can be used as amplifiers or switches depending on the circuit configuration.
  • Transistors require proper biasing to ensure stable operation in the active region.
  • Different biasing techniques include fixed bias, emitter bias, and collector feedback bias.
  • Transistor input and output characteristics help analyze their behavior.
  • BJTs have a wide range of applications in various electronic devices and circuits.