Semiconductor Electronics Materials Devices and Simple Circuits - Result Question 35
«««< HEAD:content/english/neet-pyq-chapterwise/physics/semiconductor-electronics-materials-devices-and-simple-circuits/semiconductor-electronics-materials-devices-and-simple-circuits-result-question-35.md
35. Barrier potential of a $p-n$ junction diode does not depend on
======= ####35. Barrier potential of a $p-n$ junction diode does not depend on
3e0f7ab6f6a50373c3f2dbda6ca2533482a77bed:content/english/neet-pyq-chapterwise/physics/semiconductor-electronics-materials-devices-and-simple-circuits/semiconductor-electronics-materials-devices-and-simple-circuits—result-question-35.md (a) doping density
(b) diode design
(c) temperature
(d) forward bias
[2003]
Show Answer
Answer:
Correct Answer: 35. (b)
Solution:
- (b) Barrier potential does not depend on diode design. Barrier potential depends upon temperature, doping density, and forward biasing.
Potential barrier is the potential difference created across the P-N junction due to the diffusion of electrons and holes.
